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SEMICONDUCTOR
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE DRAIN GATE
December 1995
Features
* 70A, 60V * rDS(on) = 0.014 * Temperature Compensated PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single Pulse) * +175oC Operating Temperature
DRAIN (BOTTOM SIDE METAL)
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06
DRAIN (FLANGE)
A
JEDEC TO-220AB
DRAIN (FLANGE) SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
Symbol
D
JEDEC TO-263AB
M A
A
G GATE SOURCE S
DRAIN (FLANGE)
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ 60 60 20 70 Refer to Peak Current Curve Refer to UIS Curve 150 1.0 -55 to +175 UNITS V V V A
W W/oC oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright
(c) Harris Corporation 1995
File Number
3206.3
3-51
Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Electrical Specifications
PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = 60V, VGS = 0V VGS = 20V ID = 70A, VGS = 10V VDD = 30V, ID = 70A RL = 0.43, VGS = +10V RGS = 2.5 TC = +25oC TC = +150oC MIN 60 2 VGS = 0V to 20V VDD = 48V, ID = 70A, VGS = 0V to 10V RL = 0.68 VGS = 0V to 2V VDS = 25V, VGS = 0V f = 1MHz TYP 12 50 40 15 185 100 5.5 3000 900 300 MAX 4 1 50 100 0.014 125 125 215 115 6.5 1.0 80
o o
UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF C/W C/W
Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS RJC RJA
Source-Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD tRR TEST CONDITIONS ISD = 70A ISD = 70A, dISD/dt = 100A/s MIN TYP MAX 1.5 125 UNITS V ns
3-52
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves
500 ID, DRAIN CURRENT (A) TC = +25oC 2 1 ZJC, NORMALIZED THERMAL RESPONSE 100
100s
0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-2 10-1 100 101 PDM
1ms
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10ms 100ms
VDSS MAX = 60V
DC
100
0.01 10-5
10-4
10-3
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = +25oC FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT AS FOLLOWS: I=I 175 - T C 25 ---------------------- 150
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 25 50 75 100 150 IDM, PEAK CURRENT CAPABILITY (A)
1000
VGS = 10V 100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101
125 TC, CASE TEMPERATURE (oC)
175
50 10-5
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
PULSE DURATION = 250s, TC = +25oC ID(ON), ON-STATE DRAIN CURRENT (A) 200 VGS = 20V ID, DRAIN CURRENT (A) 160 VGS = 10V VGS = 8V VGS = 7V
VDD = 15V 200 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX
160
-55oC
+25oC +175oC
120 VGS = 6V 80
120
80
40
VGS = 5V VGS = 4.5V
40
0
0
1.0
2.0
3.0
4.0
5.0
0 0 2.0 4.0 6.0 8.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
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RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves (Continued)
rDS(ON), NORMALIZED ON RESISTANCE 2.5 PULSE DURATION = 250s, VGS = 10V, ID = 70A 2.0 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250A
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0.0 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
POWER DISSIPATION MULTIPLIER -40 0 40 80 120 160 200
2.0
ID = 250A
1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25
1.5
1.0
0.5
0.0 -80
TJ , JUNCTION TEMPERATURE (oC)
125 50 75 100 TC , CASE TEMPERATURE (oC)
150
175
FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
VGS = 0V, FREQUENCY (f) = 1MHz
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE
60 VDS , DRAIN-SOURCE VOLTAGE (V) VDD = BVDSS
10 VGS , GATE-SOURCE VOLTAGE (V)
5000
VDD = BVDSS 45
C, CAPACITANCE (pF)
4000 CISS 3000
7.5
30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 0.86 IG(REF) = 2.2mA VGS = 10V G ( REF ) 20 -------------------I G ( ACT ) I t, TIME (s) G ( REF ) 80 -------------------I G ( ACT ) I
5.0
2000 COSS 1000 CRSS 0 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 25
15
2.5
0
0
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260
3-54
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves (Continued)
300 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1] STARTING TJ = +25oC
100
STARTING TJ = +150oC 10 0.01
1 0.1 tAV, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322
Test Circuits and Waveforms
VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG +
BVDSS VDS VDD
VDD
0V
IL 0.01 tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDD RL VDS VDS VGS
tON tD(ON) tR 90%
tOFF tD(OFF) tF 90%
10%
10% 90%
0V
RGS
DUT
VGS 10% 50% PULSE WIDTH
50%
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
3-55
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Temperature Compensated PSPICE Model for the RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
.SUBCKT RFG70N06 2 1 3 ;
CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1
RLGATE
rev 3/20/92
RLDRAIN DPLCAP 10 LDRAIN RSCL2 RSCL1 + 51 5 51 ESCL DBREAK 5 2 DRAIN
ESG + GATE 1 LGATE EVTO 20 + 18 8 6 8 16 VTO
50 RDRAIN
11 EBREAK 17 18 MOS2
DBODY +
6
+ 21 MOS1
-
IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9
9
RGATE
RIN
CIN 8 RSOURCE 7
RLSOURCE 3 SOURCE LSOURCE
MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01
12
S1A 13 8 S1B CA + EGS 6 8 14 13
S2A 15 17 S2B 13 CB + 14 EDS 5 8 IT
RBREAK 18 RVTO 19 VBAT +
RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 31 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 18.2 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
-
-
VBAT 8 19 DC 1 VTO 21 6 0.605
.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8) .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.
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